The number of fast recovery applications in high power systems continues to grow leading to various dynamic constraints and hence different diode designs and behaviours. Along with conventional RC (“SCR-type”) and C(“GTO-type”) snubber conditions, snubber less conditions in both IGBT and IGCT applications are gaining ground at ever higher currents and voltages (presently 6 kV). Within these two groups, the further distinctions of “inductive” and “resistive” commutation di/dt must be made for an optimal diode design. Diodes capable of high reverse di/dt and dv/dt can today be realised thanks to controlled life-time profiling which will be described here with both measured and simulated results.
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